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STM8L052C6 데이터시트(PDF) 61 Page - STMicroelectronics |
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STM8L052C6 데이터시트(HTML) 61 Page - STMicroelectronics |
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61 / 102 page ![]() STM8L052C6 Electrical parameters Doc ID 023331 Rev 1 61/102 Figure 9. Typ. IDD(Wait) vs. VDD,fCPU =16MHz 1) 1. Typical current consumption measured with code executed from Flash memory. 4. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption (IDD HSE) must be added. Refer to Table 28. 5. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption (IDD HSE) must be added. Refer to Table 29. 500 550 600 650 700 750 800 850 900 950 1000 1.8 2.1 2.6 3.1 3.6 VDD [V] -40°C 25°C 85°C ai18214V2 |
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