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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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EM3027IDSWS8 데이터시트(PDF) 4 Page - EM Microelectronic - MARIN SA |
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EM3027IDSWS8 데이터시트(HTML) 4 Page - EM Microelectronic - MARIN SA |
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4 / 28 page  EM3027 Copyright 2013, EM Microelectronic-Marin SA 3027-DS.doc, Version 8.0, 25-Jan-13 4 www.emmicroelectronic.com 2 Absolute Maximum Ratings Parameter Symbol Conditions Maximum voltage at VCC VCCmax VSS + 6.0V Minimum voltage at VCC VCCmin VSS – 0.3V Maximum voltage at any signal pin Vmax VCC + 0.3V Minimum voltage at any signal pin Vmin VSS – 0.3V Maximum storage temperature TSTOmax +150°C Minimum storage temperature TSTOmin -65°C Electrostatic discharge maximum to MIL-STD-883C method 3015.7 with ref. to VSS VSmax 2000V Table 3 Stresses above these listed maximum ratings may cause permanent damages to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction. 2.1 Handling Procedures This device has built-in protection against high static voltages or electric fields; however, anti-static precautions must be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the voltage range. Unused inputs must always be tied to a defined logic voltage level. 2.2 Operating Conditions Parameter Symbol Min Typ Max Unit Operating Temp. TA -40 +125 °C Supply voltage (Note 1) VCC, VBack 1.4 5.0 5.5 V Capacitor at VCC, VBack CD 100 nF Table 4 Note 1: Refer to paragraphs 9.1 and 9.2 2.3 Crystal characteristics Parameter Symbol Min Typ Max Unit Frequency f 32.768 kHz Load capacitance CL 7 8.2 12.5 pF Series resistance RS 70 110 k Table 5 Crystal Reference : Micro Crystal CC5V-T1A web: www.microcrystal.com 2.4 EEPROM Characteristics Parameter Symbol Min Typ Max Unit Read voltage VRead 1.4 V Programming Voltage VProg 2.2 V EEPROM Programming Time TProg 30 ms Write/Erase Cycling 5000 cycles Table 6 3 Electrical Characteristics Parameter Symbo l Test Conditions VCC Temp. °C Min Typ Max Uni t Total supply current with Crystal ICC All outputs open, Rs < 70 kΩ, VBack = 0V I2C: SDA, SCL at VCC, Clk/Int=’0’ SPI: All inputs at VSS 1.4 -40 to 125 0.6 4.6 µA 3.3 -40 to 125 0.8 5.2 5.0 -40 to 125 0.9 5.5 Total supply current with Crystal IBack All outputs open, Rs < 70 kΩ, VCC = 0V, VBack = 3.3V I2C: SDA, SCL at VBack, Clk/Int=’0’ SPI: All inputs at VSS 0 -40 to 125 0.8 5.2 µA Dynamic current I2C IDD SCL = 100kHz (See Note 1) 1.4 -40 to 125 15 µA SCL = 400kHz (See Note 1) 3.3 -40 to 125 40 SCL = 400kHz (See note 1) 5.0 -40 to 125 60 |
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