TXDVxx12

Characteristics

Doc ID 18272 Rev 2

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Table 4.

Gate characteristics (maximum values)

Symbol

Parameter

Value

Unit

Average gate power dissipation

1

W

Peak gate power dissipation

10

W

Peak gate current

4

A

Peak positive gate voltage

16

V

Table 5.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to ambient

60

°C/W

Junction to case for DC

2.5

°C/W

Junction to case for 360 °Conduction angle (F = 50 Hz)

1.9

°C/W

Figure 1.

Max. rms power dissipation versus

on-state rms current (F = 50Hz).

(curves limited by (dI/dt)c)

Figure 2.

Max. rms power dissipation and

max. allowable temperatures

0123456789

10

11

12

0

2

4

6

8

10

12

14

16

18

20

180°

α

α

α = 180°

α = 120°

α = 90°

α = 60°

α = 30°

P(W)

I

(A)

T(RMS)

0

20

40

60

80

100

120

140

0

2

4

6

8

10

12

14

16

18

20

P(W)

T

(° C)

amb

T

(° C)

case

R = 0° C/W

1° C/W

2° C/W

4° C/W

th

Figure 3.

On-state rms current versus case

temperature

Figure 4.

Relative variation of thermal

impedance versus pulse duration

0

10203040

5060708090

100 110 120 130

0

2

4

6

8

10

12

14

I

(A)

T(RMS)

T (°C)

C

α = 180°

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.01

0.1

1

Z/R

th

th

t (s)

p