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TXDV1212RG 데이터시트(PDF) 4 Page - STMicroelectronics |
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TXDV1212RG 데이터시트(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() Characteristics TXDVxx12 4/7 Doc ID 18272 Rev 2 Figure 9. Safe turn-off operating area Figure 5. Relative variation of gate trigger current and holding current versus junction temperature Figure 6. Non repetitive surge peak on-state current versus number of cycles 2.5 2.0 1.5 1.0 0.5 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 T (°C) j IGT IH I[T ] Hj I [T =25°C] Hj I[T ] GT j I [T =25°C] GT j . 120 100 80 60 40 20 0 0 10 100 1000 I (A) TSM Number of cycles T initial=25°C j One cycle t = 20 ms Figure 7. Non-repetitive surge peak on-state current for a sinusoidal pulse and corresponding values of I2t Figure 8. On-state characteristics (maximum values) 100 10 12 5 10 I (A), I t (A s) TSM 22 t (ms) p I t 2 ITSM T initial = 25°C j 1000 100 10 1 12 3 4 5 6 I (A) TM V (V) TM Tj initial = 25° C T max. j V =1.21V R =0.040 T max.: j t0 t Ω 1000 100 10 1 1 10 100 (dV/dt)c(V/µs) Tj = 110° C (dI/dt)c(A/ms) |
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