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AM29BDS323D 데이터시트(PDF) 26 Page - Advanced Micro Devices |
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AM29BDS323D 데이터시트(HTML) 26 Page - Advanced Micro Devices |
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26 / 44 page ![]() 26 Am29BDS323D P R E L I M INARY DC CHARACTERISTICS CMOS Compatible Note: 1. Maximum ICC specifications are tested with VCC = VCCmax. 2. When OE# = VIH, burst mode is deactivated. If OE# = VIL is reasserted, the last data prior to OE# = VIH will remain available from the device. A new burst read sequence is initiated when new address is asserted, AVD# = VIL and OE# = VIH . 3. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 4. ICC active while Embedded Erase or Embedded Program is in progress. 5. Device enters automatic sleep mode when addresses are stable for tACC + 60 ns. Typical sleep mode current is equal to ICC3. 6. Total current during accelerated programming is the sum of VPP and VCC currents. Parameter Description Test Conditions (Note 1) Min Typ Max Unit ILI Input Load Current VIN = VSS to VCC, VCC = VCCmax ±1 µA ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCCmax ±1 µA ICCB1 VCC Active Burst Read Current CE# = VIL, OE# = VIL 25 30 mA ICCB2 CE# = VIL, OE# = VIH (Note 2) 0.5 1 mA ICC1 VCC Active Asynchronous Read Current (Note 3) CE# = VIL, OE# = VIH 5 MHz 10 16 mA 1 MHz 2 4 mA ICC2 VCC Active Write Current (Note 4) CE# = VIL, OE# = VIH, VPP = VIH 15 40 mA ICC3 VCC Standby Current (Note 5) CE# = VIH, RESET# = VIH 0.2 10 µA ICC4 VCC Reset Current RESET# = VIL, CLK = VIL 0.2 10 µA ICC5 VCC Active Current (Read While Write) CE# = VIL, OE# = VIL 40 60 mA IPP Accelerated Program Current (Note 6) CE# = VIL, OE# = VIH, VPP = 12.0 ± 0.5 V VPP 715 mA VCC 510 mA VIL Input Low Voltage –0.5 0.2 V VIH Input High Voltage VCC – 0.2 VCC + 0.2 V VOL Output Low Voltage IOL = 100 µA, VCC = VCC min 0.1 V VOH Output High Voltage IOH = –100 µA, VCC = VCC min VCC – 0.1 V VID Voltage for Accelerated Program 11.5 12.5 V VLKO Low VCC Lock-out Voltage 1.0 1.4 V |
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