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W25Q80BWSVIP 데이터시트(PDF) 58 Page - Winbond

부품명 W25Q80BWSVIP
상세설명  1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
PDF  74 Pages
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제조업체  WINBOND [Winbond]
홈페이지  http://www.winbond.com
Logo WINBOND - Winbond

W25Q80BWSVIP 데이터시트(HTML) 58 Page - Winbond

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8.
ELECTRICAL CHARACTERISTICS
8.1
Absolute Maximum Ratings (1)
PARAMETERS
SYMBOL
CONDITIONS
RANGE
UNIT
Supply Voltage
VCC
–0.6 to VCC+0.4
V
Voltage Applied to Any Pin
VIO
Relative to Ground
–0.6 to VCC+0.4
V
Transient Voltage on any Pin
VIOT
<20nS Transient
Relative to Ground
–2.0V to VCC+2.0V
V
Storage Temperature
TSTG
–65 to +150
°C
Lead Temperature
TLEAD
See Note (2)
°C
Electrostatic Discharge Voltage
VESD
Human Body Model(3)
–2000 to +2000
V
Notes:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.
Exposure beyond absolute maximum ratings may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and
the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
8.2
Operating Ranges
PARAMETER
SYMBOL
CONDITIONS
SPEC
UNIT
MIN
MAX
Supply Voltage(1)
VCC
FR = 80MHz
fR
= 50MHz (03h &
Continuous Read Mode)
1.65
1.95
V
Ambient Temperature,
Operating
TA
Industrial
–40
+85
°C
Note:
1. VCC voltage during Read can operate across the min and max range but should not exceed ±10% of
the programming (erase/write) voltage.



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