W25Q80BWSVIP datasheet(25/74 Pages) WINBOND

25 / 74 page

W25Q80BW

Publication Release Date: July 30, 2013

- 25 -

Revision J

7.2.10

Read Data (03h)

The Read Data instruction allows one or more data bytes to be sequentially read from the memory. The

instruction is initiated by driving the /CS

pin low and then shifting the instruction code “03h” followed by

a 24-bit address (A23-A0) into the DI pin. The code and address bits are latched on the rising edge of the

CLK pin. After the address is received, the data byte of the addressed memory location will be shifted out

on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is automatically

incremented to the next higher address after each byte of data is shifted out allowing for a continuous

stream of data. This means that the entire memory can be accessed with a single instruction as long as

the clock continues. The instruction is completed by driving /CS high.

The Read Data instruction sequence is shown in figure 9. If a Read Data instruction is issued while an

Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any

effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of fR

(see AC Electrical Characteristics).

/CS

CLK

(IO

Mode 0

Mode 3

Instruction (03h)

High Impedance

24-Bit Address

Data Out 1

= MSB

Figure 9. Read Data Instruction Sequence Diagram

W25Q80BWSVIP 데이터시트(PDF) 25 Page - Winbond