IO96PDB2V1 datasheet(52/242 Pages) MICROSEMI

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ProASIC3L DC and Switching Characteristics

2-36

Revision 13

Table 2-38 • I/O Output Buffer Maximum Resistances1

Applicable to Standard Plus I/O Banks

Standard

Drive

Strength

RPULL-DOWN

(

) 2

RPULL-UP

(

) 3

3.3 V LVTTL / 3.3 V LVCMOS

2 mA

100

300

4 mA

100

300

6 mA

150

8 mA

150

12 mA

16 mA

3.3 V LVCMOS Wide Range

100 µA

Same as regular 3.3 V LVCMOS Same as regular 3.3 V LVCMOS

2.5 V LVCMOS

2 mA

100

200

4 mA

100

200

6 mA

100

8 mA

100

12 mA

1.8 V LVCMOS

2 mA

200

225

4 mA

100

112

6 mA

8 mA

1.5 V LVCMOS

2 mA

200

224

4 mA

100

112

1.2 V LVCMOS

2 mA

158

164

1.2 V LVCMOS Wide Range

100 µA

Same as regular 1.2 V LVCMOS Same as regular 1.2 V LVCMOS

3.3 V PCI/PCI-X

Per PCI/PCI-X

specification

Notes:

1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend

on VCCI, drive strength selection, temperature, and process. For board design considerations and detailed output buffer

resistances, use the corresponding IBIS models located at http://www.microsemi.com/soc/download/ibis/default.aspx.

2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec

3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec

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