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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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HAT1091C 데이터시트(PDF) 1 Page - Renesas Technology Corp |
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HAT1091C 데이터시트(HTML) 1 Page - Renesas Technology Corp |
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1 / 7 page  R07DS1172EJ0500 Rev.5.00 Page 1 of 6 Mar 19, 2014 Data Sheet HAT1091C Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 134 m Ω typ. (at V GS = –4.5 V) • Low drive current. • 2.5 V gate drive devices. • High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 6 5 4 Indexband G D S 6 1 5 D 2 D 3 D 4 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to Source voltage VDSS –20 V Gate to Source voltage VGSS ±12 V Drain current ID –1.5 A Drain peak current ID(pulse) Note1 –6 A Body - Drain diode reverse drain current IDR –1.5 A Channel dissipation Pch Note 2 830 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C R07DS1172EJ0500 (Previous: REJ03G1229-0400) Rev.5.00 Mar 19, 2014 |
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