HAT1091C datasheet(3/7 Pages) RENESAS

3 / 7 page

HAT1091C

R07DS1172EJ0500 Rev.5.00

Page 3 of 6

Mar 19, 2014

Main Characteristics

1.6

1.2

0.8

0.4

100

150

200

–30

–10

–3

–1

–0.3

–0.1

–0.1 –0.3

–0.03

–1

–3

–10 –30 –100

–10

–8

–6

–4

–2

–4

–6

–8

–10

–8

–6

–4

–2

–1

–2

–3

–4

–5

–0.03

–0.01

–100

–300

–200

–100

–2

–4

–6

–8

–10

–0.1

–10

–1

100

10000

1000

–400

ID = -1.5 A

–0.5 A

–0.8 A

–10 V

–3.5 V

–2.5 V

–7 V

–3 V

–2 V

100

μs

Ambient

Temperature Ta (

°C)

Power vs. Temperature Derating

Drain Source Voltage VDS (V)

Maximum Safe Operation Area

Typical Output Characteristics

Typical Transfer Characteristics

Drain to Source Voltage

VDS (V)

Gate to Source Voltage

VGS (V)

Gate to Source Voltage

VGS (V)

Drain Current ID

(A)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Static Drain to Source on State Resistance

vs. Drain Current

VGS = –2.5 V

–4.5 V

Pulse Test

VGS = –1.5 V

–25

°C

Tc = 75

°C

Pulse Test

VDS = –10 V

Pulse Test

Test condition.

When using the glass epoxy board.

(FR4 40 x 40 x 1.6 mm)

When using the FR4 board.

1 shot pulse, Ta = 25

°C

Operation in this

area is limited by

RDS(on)

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