HAT1091C datasheet(2/7 Pages) RENESAS

2 / 7 page

HAT1091C

R07DS1172EJ0500 Rev.5.00

Page 2 of 6

Mar 19, 2014

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to Source breakdown

voltage

V(BR)DSS

–20

—

ID = –10 mA, VGS = 0

Gate to Source breakdown

voltage

V(BR)GSS

±12

—

IG =

±100 μA, VDS = 0

Gate to Source leakage current

IGSS

—

±10

μA

VGS =

±10 V, VDS = 0

Drain to Source leakage current

IDSS

—

–1

μA

VDS = –20 V, VGS = 0

Gate to Source cutoff voltage

VGS(th)

–0.4

—

–1.4

ID = –1 mA, VDS = –10 V

Note3

Drain to Source on state

resistance

RDS(on)

—

134

175

ID = –0.8 A, VGS = –4.5 V

Note3

RDS(on)

—

205

287

ID = –0.7 A, VGS = –2.5 V

Note3

Forward transfer admittance

| yfs |

1.5

2.3

—

ID = –0.8 A, VDS = –10 V

Note3

Input capacitance

Ciss

—

200

—

VDS = –10 V, VGS = 0,

f = 1 MHz

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Total gate charge

—

2.6

—

VDS = -10 V, VGS = -4.5 V,

ID = -1.5 A

Gate to Source charge

Qgs

—

0.7

—

Gate to Drain charge

Qgd

—

0.7

—

Turn - on delay time

td(on)

—

VDS = -10 V, VGS = -4.5 V,

ID = -0.8 A, RL =12.5

Ω,

Rg = 4.7

Rise time

—

Turn - off delay time

td(off)

—

Fall time

—

Body - Drain diode forward

voltage

VDF

—

–0.85

–1.1

IF = -1.5 A, VGS = 0

Notes: 3. Pulse test

HAT1091C 데이터시트(PDF) 2 Page - Renesas Technology Corp

HAT1091C 데이터시트(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7

데이터시트 다운로드

링크 URL