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AT25DF641 데이터시트(PDF) 49 Page - List of Unclassifed Manufacturers |
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AT25DF641 데이터시트(HTML) 49 Page - List of Unclassifed Manufacturers |
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49 / 56 page ![]() AT25DF641 49 3680F–DFLASH–4/10 13.6. Program and Erase Characteristics Symbol Parameter Min Typ Max Units tPP(1) Page Program Time (256 Bytes) 1.0 3.0 ms tBP Byte Program Time 7 µs tBLKE(1) Block Erase Time 4-Kbytes 50 200 ms 32-Kbytes 250 600 64-Kbytes 400 950 tCHPE(1)(2) Chip Erase Time 64 112 sec tSUSP Program/Erase Suspend Time 10 20 µ s tRES Program/Erase Resume Time 10 20 µ s tOTPP(1) OTP Security Register Program Time 200 500 µ s tWRSR(2) Write Status Register Time 200 ns Notes: 1. Maximum values indicate worst-case performance after 100,000 erase/program cycles 2. Not 100% tested (value guaranteed by design and characterization) 13.7. Power-up Conditions Symbol Parameter Min Max Units tVCSL Minimum VCC to Chip Select Low Time 50 µ s tPUW Power-up Device Delay Before Program or Erase Allowed 10 ms VPOR Power-on Reset Voltage 1.5 2.5 V 13.8. Input Test Waveforms and Measurement Levels AC DRIVING LEVELS AC MEASUREMENT LEVEL 0.1V CC V CC/2 0.9V CC tR, tF < 2 ns (10% to 90%) 13.9. Output Test Load DEVICE UNDER TEST 15pF (frequencies above 70MHz) or 30pF |
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