SiM3U167-B-GDI

Rev. 1.1

15

Table 4. Wafer and Die Information

Wafer ID

SiM3U160-B

Wafer Dimensions

8 in

Die Dimensions

3755.64 µm x 3896.6 µm

Wafer Thickness (with backgrind)

12 mil ±1 mil

Wafer Thickness (no backgrind)

28.54 mil ±1 mil (725 µm)

Wafer Identification

Notch

Scribe Line Width

60 µm

Die Per Wafer*

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Passivation

Standard

Wafer Packaging Detail

Wafer Jar

Bond Pad Dimensions

60 µm x 60 µm

Maximum Processing Temperature

250 °C

Electronic Die Map Format

.txt

Bond Pad Pitch Minimum

75 µm

*Note: This is the Expected Known Good Die yielded per wafer and

represents the batch order quantity (one wafer).