SSF3605S datasheet(3/7 Pages) SILIKRON

부품명	SSF3605S

상세설명	Advanced MOSFET process technology

PDF	7 Pages

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제조업체	SILIKRON [Silikron Semiconductor Co.,LTD.]

홈페이지	http://www.silikron.com

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3 / 7 page

SSF3605S

©Silikron Semiconductor CO., LTD.

2012.04.09

Version: 1.2(preliminary)

page 3 of 7

www.silikron.com

Test circuits and Waveforms

Switch Waveforms:

Notes

①The maximum current rating is limited by bond-wires.

②Repetitive rating; pulse width limited by max. junction temperature.

③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal

resistance.

④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a

still air environment with TA =25°C

⑤These curves are based on the junction-to-case thermal impedence which is measured with the

device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.

⑥ The maximum current rating is limited by bond-wires.

Gate charge test circuit:

Switching time test circuit:

EAS test circuit:

SSF3605S 데이터시트(PDF) 3 Page - Silikron Semiconductor Co.,LTD.