SSF3605S datasheet(1/7 Pages) SILIKRON

부품명	SSF3605S

상세설명	Advanced MOSFET process technology

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제조업체	SILIKRON [Silikron Semiconductor Co.,LTD.]

홈페이지	http://www.silikron.com

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SSF3605S

©Silikron Semiconductor CO.,LTD.

2012.04.09

Version : 1.2(preliminary)

page 1 of 7

www.silikron.com

Main Product Characteristics:

Features and Benefits:

Description:

Absolute max Rating:

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V①

-15

A

ID @ TC = 70°C

Continuous Drain Current, VGS @ 10V①

-12.8

IDM

Pulsed Drain Current②

-120

PD @TC = 25°C

Power Dissipation③

3.1

W

VDS

Drain-Source Voltage

-30

V

VGS

Gate-to-Source Voltage

±25

V

EAS

Single Pulse Avalanche Energy @ L=0.1mH

180

mJ

IAS

Avalanche Current @ L=0.1mH

60

A

TJ

TSTG

Operating Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJA

Junction-to-ambient (t ≤ 10s) ④

—

40

℃/W

VDSS

-30V

RDS(on)

5.1m

Ω(typ.)

ID

-15A

SOP-8

Marking and pin

Assignment

Schematic diagram



Advanced MOSFET process technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



150℃ operating temperature

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with

high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable

device for use in power switching application and a wide variety of other applications.

D

G

S

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