SSF3605S datasheet(2/7 Pages) SILIKRON

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SSF3605S

©Silikron Semiconductor CO., LTD.

2012.04.09

Version: 1.2(preliminary)

page 2 of 7

www.silikron.com

Electrical Characterizes @T

A=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

-30

—

VGS = 0V, ID = -250μA

RDS(on)

Static Drain-to-Source on-resistance

—

5.1

mΩ

VGS=-20V,ID = -20A

—

6.3

7.4

VGS=-10V,ID = -20A

—

9.7

VGS=-4.5V,ID = -20A

VGS(th)

Gate threshold voltage

-1.4

-1.9

-2.7

VDS = VGS, ID = -250μA

IDSS

Drain-to-Source leakage current

—

-1

μA

VDS = -30V,VGS = 0V

IGSS

Gate-to-Source forward leakage

—

100

VGS =20V

—

-100

VGS = -20V

Total gate charge

—

ID = -15A,

VDS= -15V,

VGS = -10V

Qgs

Gate-to-Source charge

—

Qgd

Gate-to-Drain("Miller") charge

—

td(on)

Turn-on delay time

—

VGS=-10V, VDS=-15V,

ID=1A ,RGEN=3Ω

Rise time

—

td(off)

Turn-Off delay time

—

Fall time

—

Ciss

Input capacitance

—

4300

—

VGS = 0V

VDS = -15V

ƒ = 1MHz

Coss

Output capacitance

—

1000

—

Crss

Reverse transfer capacitance

—

750

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

-15

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

-120

Diode Forward Voltage

—

-0.72

-1

IS=-1A, VGS=0V

trr

Reverse Recovery Time

—

TJ = 25°C, IF =-15A, di/dt =

0A/μs

Qrr

Reverse Recovery Charge

—

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