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HM772 데이터시트(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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HM772 데이터시트(HTML) 1 Page - Hi-Sincerity Mocroelectronics |
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1 / 5 page ![]() HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9515 Issued Date : 1997.06.05 Revised Date : 2003.01.10 Page No. : 1/5 HM772 HSMC Product Specification HM772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HM772 is designed for use in output stage of amplifier, voltage regulator, DC-DC converter and driver. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25 °C) ........................................................................... 0.5 W (Note1) Total Power Dissipation (Ta=25 °C) ............................................................................... 2 W (Note2) Total Power Dissipation (Tc=25 °C)............................................................................... 1 W (Note1) Total Power Dissipation (Tc=25 °C) ............................................................................... 4 W (Note2) • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ -40 V VCEO Collector to Emitter Voltage ..................................................................................... -30 V VEBO Emitter to Base Voltage ............................................................................................. -5 V IC Collector Current (continuous) ......................................................................................... -3 A IC Collector Current (pulse).......................................................................................... -7 A (Note3) Thermal Characteristic Characteristic Symbol Max. Unit Thermal Resistance, junction to ambient (Note1) R θja 250 oC/W Thermal Resistance, junction to ambient (Note2) R θja 62.5 oC/W Thermal Resistance, junction to case (Note1) R θjc 125 oC/W Thermal Resistance, junction to case (Note2) R θjc 31.25 oC/W Note1: When tested in free air condition, without heat sinking. Note2: When mounted on a 40X40X1mm ceramic board. Note3: Single pulse PW=1ms SOT-89 |
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