28F004SC datasheet(39/42 Pages) INTEL

39 / 42 page

BYTE-WIDE SmartVoltage FlashFile™ MEMORY FAMILY

PRELIMINARY

6.7

Block Erase, Program, and Lock-Bit Configuration Performance(3, 4, 5)—

Commercial Temperature

VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C

3.3 V VPP

5 V VPP

12 V VPP

Sym

Parameter

Notes

Typ(1)

Max

Typ(1)

Max

Typ(1)

Max

Unit

W16 tWHRH1,

tEHRH1

Program Time

300

150

125

µs

Block Write Time

1.2

0.7

0.5

1.5

sec

W16 tWHRH2,

tEHRH2

Block Erase Time

0.8

0.4

0.3

sec

W16 tWHRH3,

tEHRH3

Set Lock-Bit Time

TBD

13.3

TBD

11.6

TBD

µs

W16 tWHRH4,

tEHRH4

Clear Block Lock-

Bits Time

1.8

TBD

1.2

TBD

1.1

TBD

sec

W16 tWHRH5,

tEHRH5

Program Suspend

Latency Time to

Read

7.1

6.6

9.3

7.4

10.4

µs

W16 tWHRH6,

tEHRH6

Erase Suspend

Latency Time to

Read

15.2

21.1

12.3

17.2

12.3

17.2

µs

VCC = 5 V ± 5%, 5 V ± 10%, TA = 0°C to +70°C

5 V VPP

12 V VPP

Sym

Parameter

Notes

Typ(1) Max

Typ(1) Max Unit

W16 tWHRH1,

tEHRH1

Program Time

150

100

µs

Block Write Time

0.5

1.5

0.4

sec

W16 tWHRH2,

tEHRH2

Block Erase Time

0.4

0.3

sec

W16 tWHRH3,

tEHRH3

Set Lock-Bit Time

TBD

µs

W16 tWHRH4,

tEHRH4

Clear Block Lock-Bits Time

1.1

TBD

1.0

TBD sec

W16 tWHRH5,

tEHRH5

Program Suspend Latency Time to

Read

5.6

5.2

7.5

µs

W16 tWHRH6,

tEHRH6

Erase Suspend Latency Time to

Read

9.4

13.1

9.8

12.6

µs

NOTES:

Typical values measured at TA = +25°C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to

change based on device characterization.

Excludes system-level overhead.

These performance numbers are valid for all speed versions.

Sampled, but not 100% tested.

Reference the

AC Waveform for Write Operations, Figure 19.

28F004SC 데이터시트(PDF) 39 Page - Intel Corporation

28F004SC 데이터시트(HTML) 39 Page - Intel Corporation

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