28F020 datasheet(6/38 Pages) INTEL

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28F020

Erase Voltage

Switch

Input/Output

Buffers

PGM Voltage

Switch

Chip Enable

Output Enable

Logic

Data Latch

State

Control

Command

Integrated Stop

Timer

Y-Decoder

X-Decoder

Y-Gating

2,097,152 Bit

Cell Matrix

To Array Source

WE#

CE#

OE#

0 - A17

STB

0 - DQ7

0245_01

Figure 1. 28F020 Block Diagram

Table 1. Pin Description

Symbol

Type

Name and Function

A0–A17

INPUT

ADDRESS INPUTS for memory addresses. Addresses are

internally latched during a write cycle.

DQ0–DQ7

INPUT/OUTPUT

DATA INPUT/OUTPUT: Inputs data during memory write cycles;

outputs data during memory read cycles. The data pins are active

high and float to tri-state off when the chip is deselected or the

outputs are disabled. Data is internally latched during a write cycle.

CE#

INPUT

CHIP ENABLE: Activates the device’s control logic, input buffers,

decoders and sense amplifiers. CE# is active low; CE# high

deselects the memory device and reduces power consumption to

standby levels.

OE#

INPUT

OUTPUT ENABLE: Gates the devices output through the data

buffers during a read cycle. OE# is active low.

WE#

INPUT

WRITE ENABLE: Controls writes to the control register and the

array. Write enable is active low. Addresses are latched on the

falling edge and data is latched on the rising edge of the WE#

pulse.

Note: With VPP

≤ 6.5 V, memory contents cannot be altered.

VPP

ERASE/PROGRAM POWER SUPPLY for writing the command

VCC

DEVICE POWER SUPPLY (5 V ±10%)

VSS

GROUND

28F020 데이터시트(PDF) 6 Page - Intel Corporation

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