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MSFC40 데이터시트(PDF) 2 Page - List of Unclassifed Manufacturers

부품명 MSFC40
상세설명  Thyristor/Diode Modules
PDF  4 Pages
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MSFC40 데이터시트(HTML) 2 Page - List of Unclassifed Manufacturers

  MSFC40 Datasheet HTML 1Page - List of Unclassifed Manufacturers MSFC40 Datasheet HTML 2Page - List of Unclassifed Manufacturers MSFC40 Datasheet HTML 3Page - List of Unclassifed Manufacturers MSFC40 Datasheet HTML 4Page - List of Unclassifed Manufacturers  
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MSFC40
Document Number: MSFC40
www.smsemi.com
Sep.06,2013
2
◆
Thyristor
Maximum Ratings
Thermal Characteristics
Symbol
Item
Conditions
Values
Units
Rth(j-c)
Thermal Impedance, max.
Junction to Case
0.65
℃
/W
Rth(c-s)
Thermal Impedance, max.
Case to Heatsink
0.20
℃
/W
Electrical Characteristics
Symbol
Item
Conditions
Values
Units
ITAV
Average On-State Current
Sine 180
o;Tc=85℃
40
A
ITSM
Surge On-State Current
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
1000
850
A
i
2t
Circuit Fusing Consideration
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
5000
3600
A2s
Visol
Isolation Breakdown Voltage(R.M.S)
a.c.50HZ;r.m.s.;1min
3000
V
Tvj
Operating Junction Temperature
-40 to +125
℃
Tstg
Storage Temperature
-40 to +125
℃
Mt
Mounting Torque
To terminals(M5)
3±15%
Nm
Ms
To heatsink(M6)
5±15%
Nm
di/dt
Critical Rate of Rise of On-State
Current
TVJ= TVJM , 2/3VDRM ,IG =500mA
Tr<0.5us,tp>6us
150
A/us
dv/dt
Critical Rate of Rise of Off-State
Voltage, min.
TJ=TVJM ,2/3VDRM linear voltage rise
1000
V/us
a
Maximum allowable acceleration
50
m/s
2
Symbol
Item
Conditions
Values
Units
Min. Typ.
Max.
VTM
Peak On-State Voltage, max.
T=25℃ IT =120A
1.95
V
IRRM/IDRM
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
TVJ=TVJM ,VR=VRRM ,VD=
VDRM
15
mA
VTO
On state threshold voltage
For power-loss
calculations only
(TVJ =125℃)
1.0
V
rT
Value of on-state
slope resistance. max
TVJ =TVJM
4.5
mΩ
VGT
Gate Trigger Voltage, max.
TVJ =25℃ , VD =6V
2.5
V
IGT
Gate Trigger Current, max.
TVJ =25℃ , VD =6V
150
mA
VGD
Non-triggering gate voltage, max.
TVJ=125℃,VD =2/3VDRM
0.25
V
IGD
Non-triggering gate current, max.
TVJ =125℃, VD =2/3VDRM
6
mA
IL
Latching current, max.
TVJ =25℃ , RG = 33 Ω
300
600
mA
IH
Holding current, max.
TVJ =25℃ , VD =6V
150
260
mA
tgd
Gate controlled delay time
TVJ=25℃,
IG=1A, diG/dt=1A/us
1
us
tq
Circuit commutated turn-off time
TVJ =TVJM
80
us



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