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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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FDN352AP 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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FDN352AP 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 4 page  SMD Type www.kexin.com.cn 1 MOSFET P-Channel MOSFET FDN352AP (KDN352AP) ■ Features ● VDS (V) =-30V ● ID =-1.3 A (VGS =-10V) ● RDS(ON) ＜ 180mΩ (VGS =-10V) ● RDS(ON) ＜ 300mΩ (VGS =-4.5V) 1. Gate 2. Source 3. Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 25 Continuous Drain Current ID -1.3 Pulsed Drain Current IDM -10 Power Dissipation (Note.1) 0.5 (Note.2) 0.46 Thermal Resistance.Junction- to-Ambient RthJA 250 Thermal Resistance.Junction- to-Case RthJC 75 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃ PD W V ℃ /W A Note.1: RθJA= 250°C/W when mounted on a 0.02 in pad of 2oz. copper. Note.2: RθJA= 270°C/W when mounted on a 0.001 in pad of 2oz. copper. 2 2 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 |
유사한 부품 번호 - FDN352AP |
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유사한 설명 - FDN352AP |
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