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FDN352AP 데이터시트(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

부품명 FDN352AP
상세설명  P-Channel MOSFET
PDF  4 Pages
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제조업체  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
홈페이지  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

FDN352AP 데이터시트(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd

  FDN352AP Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd FDN352AP Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd FDN352AP Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd FDN352AP Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
3
MOSFET
P-Channel MOSFET
FDN352AP (KDN352AP)
■
Typical Characterisitics
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
2
4
6
8
10
-ID, DRAIN CURRENT (A)
V
GS
= -4.0V
-10V
-6.0V
-5.0V
-7.0V
-4.5V
-8.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
oC)
I
D = -0.9A
V
GS
= -10V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
I
D = -0.45A
T
A = 125
o C
T
A = 25
oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
1
2
3
4
5
6
7
8
-V
GS , GATE TO SOURCE VOLTAGE (V)
T
A = -55
oC
25
o C
125 oC
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
V
GS
= 0V
T
A = 125
oC
25 oC
-55oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
0
2
4
6
8
10
0
1
2
3
4
5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -10V
-4.5V
-3.5V
-3.0V
-6.0V
-4.0V



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