FDN352AP datasheet(2/4 Pages) KEXIN

2 / 4 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel MOSFET

FDN352AP (KDN352AP)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-30

Zero Gate Voltage Drain Current

IDSS

VDS=-24V, VGS=0V

-1

Gate-Body leakage current

IGSS

VDS=0V, VGS=±25V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250μA (Note.1)

-0.8

-2.5

VGS=-10V, ID=-1.3A (Note.1)

180

VGS=-4.5V, ID=-1.1A

(Note.1)

300

VGS=-4.5V, ID=-1.1A,TJ=125℃ (Note.1)

400

Forward Transconductance

gFS

VDS=-5V, ID=-0.9A

Input Capacitance

Ciss

150

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

1.4

1.9

Gate Source Charge

Qgs

0.5

Gate Drain Charge

Qgd

0.5

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Maximum Body-Diode Continuous Current

-0.42

Diode Forward Voltage

VSD

IS=-0.42A,VGS=0V

(Note.1)

-1.2

mΩ

VGS=-10V, VDS=-10V, ID=-1A,RG=6Ω

(Note.1)

RDS(On)

Static Drain-Source On-Resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=-4.5V, VDS=-10V, ID=-0.9A

(Note.1)

IF=-3.9A, dI/dt=100A/μs

Note.1:Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%

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Marking

52AP

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