UM1618 datasheet(13/51 Pages) STMICROELECTRONICS

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UM1618

API specification

This function also clears PGM/ERS bit in MCR/MCRA register if any of them is set.

Assumptions

None.

2.7.2

FlashErase

Description

This function is to do erase operation for multi-blocks on single Flash module according to

user’s input arguments via main interface. The targeted Flash module status is checked in

advance to return relevant error code if any. This function only sets the high voltage without

waiting for the operation to be finished. Instead, user must call ‘FlashCheckStatus’ function

to confirm the successful completion of this operation.

Prototype

UINT32 FlashErase(PSSD_CONFIG pSSDConfig,

UINT8 eraseOption,

UINT32 lowBlockSelect,

UINT32 midBlockSelect,

UINT32 highBlockSelect,

NLARGEK_BLOCK_SEL nLargeBlockSelect);

Arguments

Table 10. Arguments for FlashErase

Argument

Description

Range

pSSDConfig

Pointer to the SSD

Configuration Structure.

The values in this structure are chip-dependent.

Please refer to Section 2.3 for more details.

eraseOption

The option is to select

user’s expected erase

operation.

The valid value can be:

C55_ERASE_MAIN (0x0)

C55_ERASE_MAIN_FERS (0x1)

C55_ERASE_UTEST (0x2)

C55_ERASE_UTEST_FERS (0x3)

lowBlockSelect

To select the array blocks

in low address space for

erasing.

Bit-mapped value such that the least significant

bit is at bit 0 of 16K block region (if available),

then 32K block region (if available) and lastly

64K block region (if available). Select the block

in the low address space to be erased by setting

1 to the appropriate bit of lowBlockSelect. If

there is not any block to be erased in the low

address space, lowBlockSelect must be set to 0.

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