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AN4149 데이터시트(PDF) 14 Page - STMicroelectronics

부품명 AN4149
상세설명  Designing a CCM PFC pre-regulator based on the L4984D
PDF  43 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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AN4149 데이터시트(HTML) 14 Page - STMicroelectronics

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Designing a CCM FOT-controlled PFC
AN4149
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DocID023523 Rev 2
Equation 33
Maximum RMS diode current:
Equation 34
It is worth reminding that the accuracy of the equations developed here is quite good at low
line voltage and worsens at high line and as the power throughput is reduced. As the current
stresses of the switches are calculated at maximum load and minimum line voltage, the
previous expressions are acceptable for design purposes.
2.3
Power section design
2.3.1
Bridge rectifier
The input rectifier bridge can use standard slow recovery, low-cost devices. Typically a
600 V device is selected in order to have good margin against mains surges. An NTC
resistor limiting the current at turn-on is required to avoid overstressing the bridge diodes.
The rectifier bridge power dissipation can be calculated starting from the input RMS current
and the input average current through the bridge diodes.
Equation 35
Equation 36
The power dissipated on a D15XB60 bridge can be estimated combining equation 35 and
equation 36 with the threshold voltage (Vth) and dynamic resistance (Rdiode) of a single
diode of the bridge, the values of which can be found in the datasheet of the diode.
Equation 37
π
3
16
2
2
mi n
min
k
PF
V
P
ISW
AC
in
rm s
⋅
−
⋅
⋅
⋅
=
A
V
W
ISW
rm s
65
.
3
3
318
.
0
16
2
99
.
0
90
2
4
.
38 0
=
⋅
−
⋅
⋅
⋅
=
π
π
3
16
2
min
mi n
k
PF
V
P
ID
AC
in
rm s
⋅
⋅
⋅
⋅
=
A
PF
V
W
ID
rms
22
.
2
3
32
.
0
16
90
2
4
.
380
=
⋅
⋅
⋅
⋅
=
π
A
A
I
I
in
bri d ge
rm s
in
02
.
3
2
36
.
4
2
2
2
_
_
=
⋅
=
⋅
=
A
A
I
I
in
bri dg e
avg
in
92
.
1
36
.
4
2
2
_
_
=
⋅
=
⋅
=
π
π
avg
in
th
inrms
diode
bridge
I
V
I
R
P
_
2
4
4
⋅
⋅
+
⋅
⋅
=
W
A
V
A
P
bridge
29
.
6
92
.
1
7
.
0
4
)
02
.
3
(
025
.
0
4
2
=
⋅
⋅
+
⋅
Ω
⋅
=



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