DIM400GDM33-F000

Dual Switch IGBT Module

Replaces DS5616-2.1

DS5616-3 February 2014 (LN31315)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

www.dynexsemi.com

FEATURES



10µs Short Circuit Withstand



High Thermal Cycling Capability



Soft Punch Through Silicon



Isolated AlSiC Base with AlN Substrates



Lead Free construction

APPLICATIONS



High Reliability Inverters



Motor Controllers



Traction Drives



Choppers

The Powerline range of high power modules includes

half bridge, chopper, dual, single and bi-directional

switch configurations covering voltages from 1200V to

6500V and currents up to 2400A.

The DIM400GDM33-F000 is a single switch 3300V, n-

channel enhancement mode, insulated gate bipolar

transistor (IGBT) module. The IGBT has a wide

reverse bias safe operating area (RBSOA) plus 10μs

short circuit withstand. This device is optimised for

traction drives and other applications requiring high

thermal cycling capability.

The module incorporates an electrically isolated base

plate and low inductance construction enabling circuit

designers to optimise circuit layouts and utilise

ORDERING INFORMATION

Order As:

DIM400GDM33-F000

Note: When ordering, please use the complete part

number

KEY PARAMETERS

3300V

2.8V

(max)

400A

(max)

800A

* Measured at the auxiliary terminals

Fig. 1 Circuit configuration

Outline type code: G

(See Fig. 11 for further information)

Fig. 2 Package

8(E

9(G

10(C

6(G

5(C

3(C1)

7(E

4(E2)

2(C)

1(E1)