DIM400GDM33-F000_15 datasheet(3/8 Pages) DYNEX

3 / 8 page

DIM400GDM33-F000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

3/8

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ELECTRICAL CHARACTERISTICS

Tcase = 25°C unless stated otherwise.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

ICES

Collector cut-off current

VGE = 0V, VCE = VCES

VGE = 0V, VCE = VCES, Tcase = 125°C

IGES

Gate leakage current

VGE = ± 20V, VCE = 0V

μA

VGE(TH)

Gate threshold voltage

IC = 40mA, VGE = VCE

5.5

6.5

7.0

VCE(sat)

†

Collector-emitter

saturation voltage

VGE = 15V, IC = 400A

2.8

VGE = 15V, IC = 400A, Tj = 125°C

3.6

Diode forward current

400

IFM

Diode maximum forward current

tp = 1ms

800

†

Diode forward voltage

IF = 400A

2.9

IF = 400A, Tj = 125°C

3.0

Cies

Input capacitance

VCE = 25V, VGE = 0V, f = 1MHz

Gate charge

±15V

μC

Cres

Reverse transfer capacitance

VCE = 25V, VGE = 0V, f = 1MHz

1.1

Module inductance

RINT

Internal transistor resistance

260



SCData

Short circuit current, ISC

Tj = 125°C, VCC = 2500V

tp ≤ 10μs, VGE ≤ 15V

VCE (max) = VCES – L

* x dI/dt

IEC 60747-9

1850

Note:

† Measured at the power busbars, not the auxiliary terminals

* L is the circuit inductance + LM

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