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DIM400GDM33-F000 데이터시트(PDF) 4 Page - Dynex Semiconductor

부품명 DIM400GDM33-F000
상세설명  Dual Switch IGBT Module
PDF  8 Pages
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제조업체  DYNEX [Dynex Semiconductor]
홈페이지  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM400GDM33-F000 데이터시트(HTML) 4 Page - Dynex Semiconductor

  DIM400GDM33-F000_15 Datasheet HTML 1Page - Dynex Semiconductor DIM400GDM33-F000_15 Datasheet HTML 2Page - Dynex Semiconductor DIM400GDM33-F000_15 Datasheet HTML 3Page - Dynex Semiconductor DIM400GDM33-F000_15 Datasheet HTML 4Page - Dynex Semiconductor DIM400GDM33-F000_15 Datasheet HTML 5Page - Dynex Semiconductor DIM400GDM33-F000_15 Datasheet HTML 6Page - Dynex Semiconductor DIM400GDM33-F000_15 Datasheet HTML 7Page - Dynex Semiconductor DIM400GDM33-F000_15 Datasheet HTML 8Page - Dynex Semiconductor  
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DIM400GDM33-F000
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 400A
VGE = ±15V
VCE = 1800V
RG(ON) = 8.2
RG(OFF) = 5.6
Cge = 110nF
LS ~ 100nH
2100
ns
tf
Fall time
210
ns
EOFF
Turn-off energy loss
520
mJ
td(on)
Turn-on delay time
1130
ns
tr
Rise time
245
ns
EON
Turn-on energy loss
620
mJ
Qrr
Diode reverse recovery charge
IF = 400A
VCE = 1800V
dIF/dt = 2000A/μs
160
μC
Irr
Diode reverse recovery current
330
A
Erec
Diode reverse recovery energy
150
mJ
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 400A
VGE = ±15V
VCE = 1800V
RG(ON) = 8.2
RG(OFF) = 5.6
Cge = 110nF
LS ~ 100nH
2150
ns
tf
Fall time
220
ns
EOFF
Turn-off energy loss
600
mJ
td(on)
Turn-on delay time
1160
ns
tr
Rise time
285
ns
EON
Turn-on energy loss
870
mJ
Qrr
Diode reverse recovery charge
IF = 400A
VCE = 1800V
dIF/dt = 2000A/μs
300
μC
Irr
Diode reverse recovery current
400
A
Erec
Diode reverse recovery energy
300
mJ



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