Programming STM8 Flash microcontrollers

PM0054

20/28

Doc ID 15433 Rev 9

5.3

Word programming

Both main program memory and data EEPROM can be programmed and erased at word

level. Word operations are performed in the same way as block operations. They can be

executed either from program memory or from RAM.

When a new word program operation starts, EOP and WR_PG_DIS bits of FLASH_IAPSR

register are automatically cleared.

Contrary to word programming of the Flash program memory, the word programming of data

EEPROM with RWW feature (when available) does not stop program execution. The EOP

bit can then indicate if the previous operation has completed. This bit is automatically reset

when reading FLASH_IAPSR.

The following sequence is required to perform a word programming operation:

1.

Unlock the memory if not already done. The UBC option byte can be read to check if

the word you want to program is not in the UBC area. If necessary, reprogram it to allow

programming the targeted word.

2.

Write 0x40 in FLASH_CR2 (WP bit active).

3.

Write 4 data bytes to memory starting with the first address of the word to be

programmed. The program cycle starts automatically when 4 bytes have been written.

4.

Check the WR_PG_DIS bit in FLASH_IAPSR to verify if the word you attempted to

program was not write-protected (optional).

5.

To check if the program operation is complete, poll the EOP bit in FLASH_IAPSR

register. EOP is set to ‘1’ when the word program operation has completed. To avoid

polling the EOP bit, an interrupt can be generated when EOP is set.

Caution:

EOP and WR_PG_DIS bits are cleared by reading the FLASH_IAPSR register. It is

consequently strongly recommended to perform one single read operation to the

FLASH_IAPSR register to check the values of these bits.

Caution:

If a word program operation is interrupted by reset, data programmed in memory may be

corrupt.

5.4

Byte programming

Both main program memory and data EEPROM can be programmed / erased at byte level.

Byte programming is performed by executing a write instruction (ld, mov...) to an address in

main program memory when the memory is unlocked. The write instruction initiates the

erase/program cycle and any core access to the memory is blocked until the cycle has

completed. This means that program execution from the Flash program memory is stopped

until the end of the erase/program cycle.

When a new byte program operation starts, EOP and WR_PG_DIS bits of FLASH_IAPSR

register are automatically cleared. At the end of the program operation, the EOP bit in the

FLASH_IAPSR register is set and the program execution restarts from the instruction

following the write/erase instruction.

Contrary to byte programming of Flash program memory, byte programming of data

EEPROM with RWW feature (when available) does not stop program execution. The EOP

bit can then be used to know if the previous operation completed. To avoid polling the EOP

bit, an interrupt can be generated when EOP is set. This bit is automatically reset when

reading FLASH_IAPSR.