| 전자부품 데이터시트 검색엔진 |
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6AM13 데이터시트(PDF) 6 Page - Hitachi Semiconductor |
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6AM13 데이터시트(HTML) 6 Page - Hitachi Semiconductor |
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6 / 12 page ![]() 6AM13 6 50 –1.0 –20 Drain Current ID (A) 20 1.0 –0.5 –2 –10 –0.2 5 10 2 0.5 –5 VDS = 10 V Pulse Test Forward Transfer Admittance vs. Drain Current 75°C –25°C TC = 25°C 500 –1.0 –20 Reverse Drain Current IDR (A) 200 10 –0.5 –2 –10 –0.2 50 100 20 5 –5 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/ µs, Ta = 25°C VGS = 0 Pulse Test 10,000 –20 –50 Drain to Source Voltage VDS (V) 100 –10 –30 –40 1,000 Typical Capacitance vs. Drain to Source Voltage 0 10 VGS = 0 f = 1 MHz Crss Coss Ciss 0 40 100 Gate Charge Qg (nc) Dynamic Input Characteristics –20 –80 20 60 80 0 –60 –40 0 –4 –16 –20 –12 –8 –100 VDD = –50 V –25 V –10 V –10 V –25 V VDD = –50 V VDS ID = –15 A VGS |
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