| 전자부품 데이터시트 검색엔진 |
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6AM13 데이터시트(PDF) 9 Page - Hitachi Semiconductor |
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6AM13 데이터시트(HTML) 9 Page - Hitachi Semiconductor |
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9 / 12 page ![]() 6AM13 9 10 Drain Current ID (A) 20 5 2 100 0.02 0.05 0.1 0.2 0.5 1 0.01 0.005 50 Static Drain to Source on State Resistance vs. Drain Current VGS = 4 V 10 V Pulse Test 80 Case Temperature TC (°C) 120 40 0 0.04 0.08 0.12 0.16 0.20 –40 0 160 Static Drain to Source on State Resistance vs. Temperature ID = 10 A 5 A 20 A Pulse Test VGS = 4 V VGS = 10 V 10 A 5 A Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1.0 0.5 0.2 0.5 1.0 2 5 20 Drain Current ID (A) 10 TC = 25°C VDS = 10 V Pulse Test –25°C 75°C 1000 500 200 100 50 20 10 0.5 1.0 5 50 Reverse Drain Current IDR (A) 10 2 20 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/ µs, Ta = 25°C VGS = 0 Pulse Test |
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