6AM13 datasheet(4/12 Pages) HITACHI

부품명	6AM13

상세설명	Silicon N-Channel/P-Channel Complementary Power MOS FET Array

PDF	12 Pages

Scroll/Zoom	100%

제조업체	HITACHI [Hitachi Semiconductor]

홈페이지	http://www.renesas.com/eng

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4 / 12 page

6AM13

100

125

150

Ambient Temperature Ta (°C)

6 Device Operation

Condition : Channel dissipation of

each die is identical

4 Device Operation

2 Device Operation

1 Device Operation

Maximum Channel Dissipation Curve

100

125

150

Case Temperature Tc (°C)

Condition : Channel dissipation of

each die is identical

6 Device Operation

4 Device Operation

2 Device Operation

1 Device Operation

Maximum Channel Dissipation Curve

– 50

– 30

– 10

– 3

– 1

– 0.3

– 0.1

– 0.05

– 0.1

– 0.3

– 1

– 3

– 10

– 30

– 100

Drain to Source Voltage V

(V)

Operation

(Tc

25°C)

Ta = 25°C

Operation in this area

is limited by R

(on)

100

Maximum Safe Operation Area

(P-Channel)

–50

–8

–20

Drain to Source Voltage VDS (V)

Typical Output Characteristics

–40

–10

–4

–12

–16

–20

–30

Pulse Test

–5 V

–4 V

VGS = –3 V

–8 V

–6 V

–10 V

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