| 전자부품 데이터시트 검색엔진 |
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AS3435 데이터시트(PDF) 54 Page - ams AG |
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AS3435 데이터시트(HTML) 54 Page - ams AG |
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54 / 102 page ![]() AS3415/AS3435 – 54 ams Datasheet, Confidential: 2014-Jun-13 [v1-30] De tail ed De sc rip t ion OTP Fuse Storing Many wireless applications, like Bluetooth single chips support programmable solutions, as well as ROM versions. As such, it is necessary for ROM versions to store microphone gain compensation data and the general ANC configuration inside the ANC chip. This is necessary because there is no other way to configure the ANC chip during startup. In order to guarantee successful trimming of AS3415/35 it is necessary to provide a decent environment for the trimming process. Figure 69 shows a principal block diagram for trimming the AS3415/35 properly in production using the I²C interface. The most important block is the external power supply. Usually it is possible to trim the AS3415/35 with a single supply voltage of min. 1.8V in laboratory environment, but as soon as it comes to mass production we highly recommend buffering VNEG supply of the chip. As highlighted in the block diagram, it is mandatory to get a voltage difference between VPOS and VNEG of 3.4V (minimum) to guarantee proper trimming of the device, therefore it is possible to buffer it externally with a negative power supply. The VNEG voltage applied to VNEG pin must be lower than the voltage created with the charge pump. This means if the typical VNEG output voltage is -1.5V you can easily apply externally -1.7V. The charge pump switches then automatically into skip mode. Figure 69: Production Environment I²C Interface Trimming I²C Trimming: This block diagram shows a general overview of the production environment when storing the register settings to the AS3415/35 using a standard I²C interface. |
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