LNBH25S datasheet(16/37 Pages) STMICROELECTRONICS

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Typical application circuits

LNBH25S

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DocID026736 Rev 2

Typical application circuits

Figure 6: DiSEqC 1.x application circuit

Table 5: DiSEqC 1.x bill of material

Component

Notes

R1 (RSEL)

SMD resistor. Refer to Table 13: "Electrical characteristics" and ISEL pin

description in Table 2: "Pin description"

> 25 V electrolytic capacitor, 100 µF or higher is suitable

> 25 V ceramic capacitor, 10 µF or higher is suitable

With COMP = 0, > 25 V electrolytic capacitor, 100 µF or higher is suitable

with COMP = 1, > 35 V ceramic capacitor, 22 µF (or 2 x 10 µF) or higher is

suitable

From 470 nF to 2.2 µF ceramic capacitor placed as closer as possible to VUP

pins. Higher values allow lower DC-DC noise

From 100 nF to 220 nF ceramic capacitor placed as close as possible to VOUT

pins. Higher values allow lower DC-DC noise

C4, C7

220 nF ceramic capacitors. To be placed as close as possible to VOUT pin

STPS130A or similar Schottky diode

1N4001-07, S1A-S1M, or any similar general purpose rectifier

BAT54, BAT43, 1N5818, or any low power Schottky diode with IF(AV) > 0.2 A,

VRRM > 25 V, VF < 0.5 V. To be placed as close as possible to VOUT pin

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