LNBH25S datasheet(17/37 Pages) STMICROELECTRONICS

17 / 37 page

LNBH25S

Typical application circuits

DocID026736 Rev 2

17/37

Component

Notes

With COMP=0, use 10 µH inductor with ISAT > IPEAK where IPEAK is the boost

converter peak current, or

with COMP=1 and C2 = 22 µF, use 6.8 µH inductor with ISAT > IPEAK where IPEAK is

the boost converter peak current

Figure 7: DiSEqC 2.x application circuit

Table 6: DiSEqC 2.x bill of material

Component

Notes

R1 (RSEL)

SMD resistor. Refer to Table 13: "Electrical characteristics" and ISEL pin

description in Table 2: "Pin description"

> 25 V electrolytic capacitor, 100 µF or higher is suitable

> 25 V ceramic capacitor, 10 µF or higher is suitable

With COMP = 0, > 25 V electrolytic capacitor, 100 µF or higher is suitable

with COMP = 1, > 35 V ceramic capacitor, 22 µF (or 2 x10 µF) or higher is suitable

From 470 nF to 2.2 µF ceramic capacitor placed as closer as possible to VUP pin.

Higher values allow lower DC-DC noise

From 100 nF to 220 nF ceramic capacitor placed as closer as possible to VOUT

pin. Higher values allow lower DC-DC noise

C4, C7

220 nF ceramic capacitors. To be placed as closer as possible to VOUT pin

10 nF ceramic capacitors

STPS130A or similar Schottky diode

LNBH25S 데이터시트(PDF) 17 Page - STMicroelectronics