STB80N4F6AG datasheet(1/15 Pages) STMICROELECTRONICS

부품명	STB80N4F6AG

상세설명	High avalanche ruggedness

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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1 / 15 page

November 2015

DocID027978 Rev 2

1/15

This is information on a product in full production.

www.st.com

STB80N4F6AG

Automotive-grade N-

Channel 40 V, 5.5 mΩ typ.,80 A

STripFET™ F6 Power MOSFET in a D²PAK package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

STB80N4F6AG

40 V

6 mΩ

80 A



Designed for automotive applications and

AEC-Q101 qualified



Very low on-resistance



Very low gate charge



High avalanche ruggedness



Low gate drive power loss

Applications



Switching applications

Description

This device is an N-channel Power MOSFET

developed using the STripFET™ F6 technology

with a new trench gate structure. The resulting

Power MOSFET exhibits very low RDS(on) in all

packages.

Table 1: Device summary

Order code

Marking

Package

Packaging

STB80N4F6AG

80N4F6

D²PAK

Tape and Reel

1

3

TAB

D2PAK

AM01475v1_Tab

D(2, TAB)

G(1)

S(3)

유사한 부품 번호 - STB80N4F6AG

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STB80N20M5	935Kb / 14P	N-channel 200 V, 0.019 ohm, 61 A, TO-220, D2PAK 03-Jul-2010
Inchange Semiconductor ...	STB80N20M5	324Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STB80NE03L-06	295Kb / 9P	N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET™ POWER MOSFET Feb-2003
	STB80NE03L-06	405Kb / 13P	N-channel 30V - 0.005ohm - 85A - D2PAK STripFET TM Power MOSFET 25-Jul-2006
	STB80NE03L-06-1	295Kb / 9P	N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET™ POWER MOSFET Feb-2003

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STB80N4F6AG 데이터시트(PDF) 1 Page - STMicroelectronics

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