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STB80N4F6AG 데이터시트(PDF) 5 Page - STMicroelectronics |
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STB80N4F6AG 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() STB80N4F6AG Electrical characteristics DocID027978 Rev 2 5/15 Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source drain current 80 A ISDM(1) Source-drain current (pulsed) 320 A VSD(2) Forward on voltage ISD= 40 A, VGS= 0 V 1.3 V trr Reverse recovery time ISD = 80 A, di/dt = 100 A/μs, VDD= 32 V (See Figure 17: "Unclamped inductive waveform") 41.1 ns QRR Reverse recovery charge 43.6 nC IRRM Reverse recovery current 2.1 A Notes: (1)Pulse width limited by safe operating area. (2)Pulsed: pulse duration = 300 μs, duty cycle 1.5% |
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