STB80N4F6AG datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Electrical characteristics

STB80N4F6AG

4/15

DocID027978 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 4: On/Off States

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 250 µA

IDSS

Zero gate voltage drain current

(VGS= 0V)

VDS = 40 V

µA

VDS = 40 V

Tj = 125 °C

100

µA

IGSS

Gate-body leakage current

(VDS= 0 V)

VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID= 40 A

5.5

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

2150

Coss

Output capacitance

335

Crss

Reverse transfer

capacitance

160

Total gate charge

VDD = 20 V, ID = 80 A,

VGS = 10 V (see Figure 14:

"Test circuit for gate charge

behavior" )

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 20 V, ID = 40 A RG = 4.7

Ω,

VGS = 10 V(see Figure 15: "Test

circuit for inductive load switching

and diode recovery times" )

10.5

Rise time

7.6

td(off)

Turn-off-delay time

46.1

Fall time

11.9

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