STM32F446VC datasheet(153/201 Pages) STMICROELECTRONICS

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DocID027107 Rev 5

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STM32F446xC/E

Electrical characteristics

174

Table 86. Asynchronous non-multiplexed SRAM/PSRAM/NOR -

read timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

2THCLK – 2

2 THCLK + 0.5

tv(NOE_NE)

FMC_NEx low to FMC_NOE low

tw(NOE)

FMC_NOE low time

2THCLK - 1

2THCLK + 0.5

th(NE_NOE)

FMC_NOE high to FMC_NE high hold time

tv(A_NE)

FMC_NEx low to FMC_A valid

0.5

th(A_NOE)

Address hold time after FMC_NOE high

tv(BL_NE)

FMC_NEx low to FMC_BL valid

th(BL_NOE)

FMC_BL hold time after FMC_NOE high

tsu(Data_NE)

Data to FMC_NEx high setup time

THCLK - 2

tsu(Data_NOE)

Data to FMC_NOEx high setup time

THCLK - 2

th(Data_NOE)

Data hold time after FMC_NOE high

th(Data_NE)

Data hold time after FMC_NEx high

tv(NADV_NE)

FMC_NEx low to FMC_NADV low

tw(NADV)

FMC_NADV low time

THCLK +1

Table 87. Asynchronous non-multiplexed SRAM/PSRAM/NOR read -

NWAIT timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

7THCLK + 1

7THCLK

tw(NOE)

FMC_NWE low time

5THCLK – 1

5THCLK + 1

tw(NWAIT)

FMC_NWAIT low time

THCLK – 0.5

tsu(NWAIT_NE)

FMC_NWAIT valid before FMC_NEx high

5THCLK+ 1.5

th(NE_NWAIT)

FMC_NEx hold time after FMC_NWAIT

invalid

4THCLK + 1

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