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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32F446VC 데이터시트(PDF) 154 Page - STMicroelectronics |
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STM32F446VC 데이터시트(HTML) 154 Page - STMicroelectronics |
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154 / 201 page  Electrical characteristics STM32F446xC/E 154/201 DocID027107 Rev 5 Figure 51. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms 1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used. Table 88. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2) 1. CL = 30 pF. 2. Guaranteed based on test during characterization. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 3 THCLK - 2 3 THCLK +0.5 ns tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK – 0.5 THCLK + 0.5 tw(NWE) FMC_NWE low time THCLK THCLK+ 0.5 th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK + 0.5 - tv(A_NE) FMC_NEx low to FMC_A valid - 0 th(A_NWE) Address hold time after FMC_NWE high THCLK - 0.5 - tv(BL_NE) FMC_NEx low to FMC_BL valid - 1 th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK + 0.5 - tv(Data_NE) Data to FMC_NEx low to Data valid - THCLK + 2 th(Data_NWE) Data hold time after FMC_NWE high THCLK + 0.5 - tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0 tw(NADV) FMC_NADV low time - THCLK+ 0.5 |
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