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SP3249E 데이터시트(PDF) 8 Page - Sipex Corporation

부품명 SP3249E
상세설명  Intelligent 3.0V to 5.5V RS-232 Transceivers
PDF  14 Pages
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제조업체  SIPEX [Sipex Corporation]
홈페이지  http://www.sipex.com
Logo SIPEX - Sipex Corporation

SP3249E 데이터시트(HTML) 8 Page - Sipex Corporation

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Rev.4/08/02
SP3249E Intelligent +3.0V to +5.5V RS-232 Transceivers
© Copyright 2002 Sipex Corporation
8
— V
DD charge storage — The third phase of the
clock is identical to the first phase — the charge
transferred in C
1 produces –VCC in the negative
terminal of C
1, which is applied to the negative
side of capacitor C
2.
Since C
2
+ is at V
CC, the
voltage potential across C
2 is 2 times VCC.
Phase 4 (Figure 15)
— V
DD transfer — The fourth phase of the clock
connects the negative terminal of C
2 to GND,
and transfers this positive generated voltage
across C
2 to C4, the VDD storage capacitor. This
voltage is regulated to +5.5V. At this voltage,
the internal oscillator is disabled. Simultaneous
with the transfer of the voltage to C
4, the
positive side of capacitor C
1 is switched to VCC
and the negative side is connected to GND,
allowing the charge pump cycle to begin again.
The charge pump cycle will continue as long as
the operational conditions for the internal
oscillator are present.
Since both V+ and Vare separately generated
from V
CC, in a no–load condition V
+ and Vwill
be symmetrical. Older charge pump approaches
that generate Vfrom V+ will show a decrease in
the magnitude of Vcompared to V+ due to the
inherent inefficiencies in the design.
The clock rate for the charge pump typically
operates at 500kHz. The external capacitors can
be as low as 0.1
µF with a 16V breakdown
voltage rating.
Figure 11. Charge Pump — Phase 2
VCC = +5V
–10V
VSS Storage Capacitor
VDD Storage Capacitor
C1
C2
C3
C4
+
+
++
VCC = +5V
–5V
–5V
+5V
VSS Storage Capacitor
VDD Storage Capacitor
C1
C2
C3
C4
+
+
++
Figure 10. Charge Pump — Phase 1
Figure 12. Charge Pump Waveforms
Ch1 2.00V Ch2 2.00V M 1.00
µs Ch1 1.96V
2
1
T
T
[]
T
2
+6V
a) C2+
b) C2-
-6V
0V
0V



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