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BQ76PL536APAPR 데이터시트(PDF) 6 Page - Texas Instruments |
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BQ76PL536APAPR 데이터시트(HTML) 6 Page - Texas Instruments |
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6 / 74 page ![]() bq76PL536A SLUSAD3B – JUNE 2011 – REVISED JANUARY 2016 www.ti.com Pin Functions (continued) PIN TYPE(1) DESCRIPTION NAME NO. VC6 1 AI Sense voltage input terminal for the positive terminal of the sixth cell Internal analog voltage reference (+), requires 10-µF, low-ESR ceramic capacitor to VREF 16 P AGND for stability 14, 33, 34, VSS VSS P 35 VSSD 25, 49 P VSS Thermal pad on bottom of PowerPAD™ package; this must be soldered to similar-size Thermal pad – – copper area on PCB and connected to VSS, to meet stated specifications herein. Provides heat-sinking to part. (1) Key: I = digital input, AI = analog input, O = digital output, OD = open-drain output, T = 3-state output, P = power. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage, VMAX BAT1(2) –0.3 36 V BAT voltage to any other pin BAT to any pin –0.3 36 V VC1, VC2, VC3, VC4, VC5, VC6 –0.3 36 VC0 –0.3 2 TS1+, TS1–, TS2+, TS2– –0.3 6 Input voltage, VIN GPAI –0.3 6 V GPIO –0.3 VREG50 + 0.3 DRDY_N, SDO_N, FAULT_N, ALERT_N VBAT – 1 VBAT + 2 CONV_S, SDI_S, SCLK_S, CS_S –2 1 CONV_N, SDI_N, SCLK_N, CS_N –0.3 36 DRDY_S, SDO_S, FAULT_S, ALERT_S –0.3 5 Output voltage, VO GPIO –0.3 VREG50 + 0.3 V CB1…CB6 (CBREF = 0x00) –0.3 36 REG50, AUX –0.3 6 Junction temperature, TJ 150 °C Storage temperature, Tstg –65 50 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to VSS of this device except where otherwise noted. 6.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6 Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated Product Folder Links: bq76PL536A |
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