DMN2014LHAB-13 datasheet(2/6 Pages) DIODES

2 / 6 page

DMN2014LHAB

Document number: DS36441 Rev. 3 - 2

2 of 6

www.diodes.com

February 2016

DMN2014LHAB

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±12

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

9.0

7.1

t < 10s

TA = +25C

TA = +70C

9.3

7.4

Pulsed Drain Current (

10μs Pulse, Duty Cycle = 1% )

IDM

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

0.8

TA = +70°C

0.5

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

157

°C/W

t < 10s

148

Total Power Dissipation (Note 6)

TA = +25°C

1.7

TA = +70°C

1.1

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

73.7

°C/W

t < 10s

Thermal Resistance, Junction to Case

RθJC

9.4

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

1.0

μA

VDS = 20V, VGS = 0V

Gate-Source Leakage

IGSS

—

±10

μA

VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

0.3

0.71

1.1

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

Ω

VGS = 4.5V, ID = 4.0A

VGS = 4.0V, ID = 4.0A

VGS = 3.1V, ID = 4.0A

VGS = 2.5V, ID = 4.0A

VGS = 1.8V, ID = 3.5A

Forward Transfer Admittance

|Yfs|

—

VDS = 5V, ID = 6A

Diode Forward Voltage

VSD

—

0.75

1.0

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

1550

—

VDS = 10V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

166

—

Reverse Transfer Capacitance

Crss

—

145

—

Gate Resistance

—

1.37

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 2.5V)

—

8.4

—

VDS = 10V, ID = 6A

Total Gate Charge (VGS = 4.5V)

—

Gate-Source Charge

Qgs

—

2.3

—

Gate-Drain Charge

Qgd

—

2.5

—

Turn-On Delay Time

tD(ON)

—

6.9

—

VDD = 10V, RL = 1.7Ω,

VGS = 5.0V, Rg = 3Ω

Turn-On Rise Time

—

15.5

—

Turn-Off Delay Time

tD(OFF)

—

40.9

—

Turn-Off Fall Time

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad

7. Repetitive rating, pulse width limited by junction temperature

8. Guaranteed by design. Not subject to product testing

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