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DMN2014LHAB-13 데이터시트(PDF) 4 Page - Diodes Incorporated |
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DMN2014LHAB-13 데이터시트(HTML) 4 Page - Diodes Incorporated |
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4 / 6 page ![]() DMN2014LHAB Document number: DS36441 Rev. 3 - 2 4 of 6 www.diodes.com February 2016 © Diodes Incorporated DMN2014LHAB 0 2 4 6 8 10 12 14 16 18 20 1,000 100 10 1,000 V , DRAIN-SOURCE VOLTAGE (V) DS Figure 7 Typical Junction Capacitance Ciss C oss Crss f = 1MHz 0 5 10 15 20 25 30 35 40 Q (nC) g, TOTAL GATE CHARGE Figure 8 Gate Charge 0 2 4 6 8 10 V = 10V I = A DS D 6 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Figure 11 Transient Thermal Resistance 0.001 0.01 0.1 1 R (t) = r(t) * R R = 100癈 /W Duty Cycle, D = t1/ t2 JA JA JA D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse 0.01 0.1 1 10 100 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. SOA, Safe Operation Area T J(Max) = 150℃ T C = 25℃ Single Pulse DUT on 1*MRP Board V GS= 4.5V P W =10s P W =10ms P W =100µs DC R DS(ON) Limited P W =1ms P W =100ms P W =1s ℃ 10 |
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