DMN2990UFA datasheet(2/6 Pages) DIODES

2 / 6 page

DMN2990UFA

Document number: DS35765 Rev. 3 - 2

2 of 6

www.diodes.com

June 2013

DMN2990UFA

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±8

Continuous Drain Current (Note 5) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

510

410

t<10s

TA = +25°C

TA = +70°C

610

490

Continuous Drain Current (Note 5) VGS = 1.8V

Steady

State

TA = +25°C

TA = 70°C

380

300

t<10s

TA = +25°C

TA = +70°C

450

360

Pulsed Drain Current (Note 6)

IDM

800

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

Steady state

400

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RJA

310

°C/W

t<10s

220

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

@TC = +25°C

IDSS

—

100

VDS = 16V, VGS = 0V

—

VDS = 5V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±5V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

0.4

—

1.0

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

0.60

0.99

VGS = 4.5V, ID = 100mA

—

0.75

1.2

VGS = 2.5V, ID = 50mA

—

0.90

1.8

VGS = 1.8V, ID = 20mA

—

1.2

2.4

VGS = 1.5V, ID = 10mA

—

2.0

—

VGS = 1.2V, ID = 1mA

Forward Transfer Admittance

|Yfs|

180

—

VDS = 10V, ID = 400mA

Diode Forward Voltage

VSD

0.6

1.0

VGS = 0V, IS = 150mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

27.6

55.2

VDS = 16V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

4.0

8.0

Reverse Transfer Capacitance

Crss

—

2.8

5.6

Total Gate Charge

—

0.5

—

VGS = 4.5V, VDS = 10V,

ID = 250mA

Gate-Source Charge

Qgs

—

0.07

—

Gate-Drain Charge

Qgd

—

0.07

—

Turn-On Delay Time

tD(on)

—

4.0

—

VDD = 10V, VGS = 4.5V,

RL = 47Ω, RG = 10Ω,

ID = 200mA

Turn-On Rise Time

—

3.3

—

Turn-Off Delay Time

tD(off)

—

19.0

—

Turn-Off Fall Time

—

6.4

—

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10

μs pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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