DMN2990UFA

Document number: DS35765 Rev. 3 - 2

4 of 6

www.diodes.com

June 2013

© Diodes Incorporated

DMN2990UFA

0

0.2

0.4

0.6

0.8

1

1.2

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE( C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

J



V

(V) @ I = 250µA

TH

D

V

(V) @ I = 1mA

TH

D

0

0.2

0.4

0.6

0.8

1

0

0.2

0.4

0.6

0.8

1

1.2

V

(V) @ V

= 0V, T = 25°C

SD

GS

A

V

, SOURCE- DRAIN VOLTAGE (V)

Fig. 8 Diodes Forward Voltage vs. Current

SD

V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Junction Capacitance

DS

50

40

30

20

10

0

10

15

20

5

0

f = 1MHz

Ciss Ave (pF)

Coss Ave (pF)

Crss Ave (pF)

1

10

100

1000

2

4

6

8

10

12

14

16

18

20

V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

DS

I

(nA) Ave @ 25°C

DSS

I

(nA) Ave @ 85°C

DSS

I

(nA) Ave @ 125°C

DSS

I

(nA) Ave @ 150°C

DSS

0

2

4

6

8

0

0.2

0.4

0.6

0.8

1

Q - (nC)

Fig. 11 Gate Charge Characteristics

G

V

= 10V

DS