GD25Q32C datasheet(46/50 Pages) ELM

46 / 50 page

Rev.1.0

50 -

http://www.elm-tech.com

GD25Q32CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash

Note:

(1). Max Value 4KB tSE with<50K cycles is 200ms and >50K & <100k cycles is 300ms.

(2). Max Value 32KB tBE with<50K cycles is 0.8s and >50K & <100k cycles is 1.6s.

(3). Max Value 64KB tBE with<50K cycles is 1.2s and >50K & <100k cycles is 2.0s.

Symbol

Parameter

Min.

Typ.

Max.

Unit.

tSHCH CS# Not Active Setup Time

tCHSL CS# Not Active Hold Time

tSHSL CS# High Time (Read/Write)

tSHQZ Output Disable Time

tCLQX Output Hold Time

1.2

tDVCH Data In Setup Time

tCHDX Data In Hold Time

tHLCH Hold# Low Setup Time (Relative to Clock)

tHHCH Hold# High Setup Time (Relative to Clock)

tCHHL Hold# High Hold Time (Relative to Clock)

tCHHH Hold# Low Hold Time (Relative to Clock)

tHLQZ Hold# Low To High-Z Output

tHHQX Hold# High To Low-Z Output

tCLQV Clock Low To Output Valid

tWHSL Write Protect Setup Time Before CS# Low

tSHWL Write Protect Hold Time After CS# High

100

tDP

CS# High To Deep Power-Down Mode

μs

tRES1 CS# High To Standby Mode Without Electronic Signature Read

μs

tRES2 CS# High To Standby Mode With Electronic Signature Read

μs

tSUS CS# High To Next Command After Suspend

μs

tRST CS# High To Next Command After Reset

μs

Write Status Register Cycle Time

tBP1 Byte Program Time (First Byte)

μs

tBP2 Additional Byte Program Time (After First Byte)

2.5

μs

tPP

Page Programming Time

0.6

2.4

tSE

Sector Erase Time (4K Bytes)

200/300(1) ms

tBE1 Block Erase Time (32K Bytes)

0.15

0.8/1.6(2)

tBE2 Block Erase Time (64K Bytes)

0.25

1.2/2.0(3)

tCE

Chip Erase Time (GD25Q32C)

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