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AUIR08152S 데이터시트(PDF) 12 Page - Infineon Technologies AG

부품명 AUIR08152S
상세설명  BUFFER GATE DRIVER INTEGRATED CIRCUIT
PDF  18 Pages
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

AUIR08152S 데이터시트(HTML) 12 Page - Infineon Technologies AG

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AUIR08152S
12
Rev. A8.0
2015-11-09
General Application Hints
IN & LPM interface
IN and LPM have a current capability of 10mA max (source and sink); these limits only apply in case the stage
driving these signals may go above Vcc or below Vcc-40V.
In the majority of cases, when the driving stage is only an open collector, referenced at GND or
–Vee, when
looking at the functional block diagram, it appears the internal comparators have 6V zener clamp diodes, whose
current is limited to much lower current by internal limiting resistors. These currents are IIN15 and ILPM15 and are
reported in the static electrical characteristics for Vcc=15V and IN and LPM being pulled down at GND level.
In any case, when driving IN and LPM via open collector outputs, a pull-up resistor is needed, to guarantee
clean rise times (fall time are uniquely determined by the speed the open collectors turns-on).
Rise time is determined by the pull-up resistor and the equivalent pin capacitance to Vcc. Typically few hundred
Ohm to few kOhm are placed here.
If a push pull, and not an open collector, stage is used to drive IN and LPM, no pull-up resistor is needed but pay
attention the push pull stage is fed between Vcc and GND or Vcc and
–Vee.
A pull down resistor (few hundred kOhm) is suggested instead, especially if long traces or cables connect the
predriver to the buffer IC.
IC power dissipation
This figure is mostly related to the switching frequency, the value of external gate resistances, and the
equivalent load capacitance (the IGBT gate Ciss).
A complete characterization of the IC capabilities is given in figure 6, and shown here again for sake of clarity.



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