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STM32F303XD 데이터시트(PDF) 73 Page - STMicroelectronics

부품명 STM32F303XD
상세설명  ARM Cortex-M4 32b MCUFPU, up to 512KB Flash, 80KB SRAM, FSMC, 4 ADCs, 2 DAC ch., 7 comp, 4 Op-Amp, 2.0-3.6 V
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32F303XD 데이터시트(HTML) 73 Page - STMicroelectronics

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STM32F303xD STM32F303xE
Electrical characteristics
151
6.3.2
Operating conditions at power-up / power-down
The parameters given in Table 20 are derived from tests performed under the ambient
temperature condition summarized in Table 19.
6.3.3
Embedded reset and power control block characteristics
The parameters given in Table 21 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 19.
Table 20. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
Max
Unit
tVDD
VDD rise time rate
-
0
∞
µs/V
VDD fall time rate
20
∞
tVDDA
VDDA rise time rate
-
0
∞
VDDA fall time rate
20
∞
Table 21. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min.
Typ. Max. Unit
VPOR/PDR(1)
1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector
monitors only VDD.
Power on/power down
reset threshold
Falling edge
1.8(2)
2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
1.88
1.96
V
Rising edge
1.84
1.92
2.0
V
VPDRhyst(1) PDR hysteresis
-
-
40
-
mV
Table 22. Programmable voltage detector characteristics
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
Unit
VPVD0
PVD threshold 0
Rising edge
2.1
2.18
2.26
V
Falling edge
2
2.08
2.16
VPVD1
PVD threshold 1
Rising edge
2.19
2.28
2.37
Falling edge
2.09
2.18
2.27
VPVD2
PVD threshold 2
Rising edge
2.28
2.38
2.48
Falling edge
2.18
2.28
2.38
VPVD3
PVD threshold 3
Rising edge
2.38
2.48
2.58
Falling edge
2.28
2.38
2.48
VPVD4
PVD threshold 4
Rising edge
2.47
2.58
2.69
Falling edge
2.37
2.48
2.59
VPVD5
PVD threshold 5
Rising edge
2.57
2.68
2.79
Falling edge
2.47
2.58
2.69



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