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STM32F303XD 데이터시트(PDF) 94 Page - STMicroelectronics

부품명 STM32F303XD
상세설명  ARM Cortex-M4 32b MCUFPU, up to 512KB Flash, 80KB SRAM, FSMC, 4 ADCs, 2 DAC ch., 7 comp, 4 Op-Amp, 2.0-3.6 V
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STM32F303XD 데이터시트(HTML) 94 Page - STMicroelectronics

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Electrical characteristics
STM32F303xD STM32F303xE
94/173
DocID026415 Rev 5
6.3.10
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
6.3.11
FSMC characteristics
Unless otherwise specified, the parameters given in Table 45 to Table 60 for the FSMC
interface are derived from tests performed under the ambient temperature, fHCLK frequency
and VDD supply voltage conditions summarized in Table 19 with the following configuration:
•
Output speed is set to OSPEEDRy[1:0] = 11
•
Capacitive load C = 30 pF
•
Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.15: I/O port characteristics: for more details on the input/output
characteristics.
Table 43. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design, not tested in production.
Unit
tprog
16-bit programming time TA = –40 to +105 °C
40
53.5
60
µs
tERASE Page (2 KB) erase time
TA = –40 to +105 °C
20
-
40
ms
tME
Mass erase time
TA = –40 to +105 °C
20
-
40
ms
IDD
Supply current
Write mode
-
-
10
mA
Erase mode
-
-
12
mA
Table 44. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1. Data based on characterization results, not tested in production.
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2. Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
10
10 kcycle(2) at TA = 55 °C
20



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